MRF18090AR3 5 ? 1 freescale semiconductor wireless rf product device data rf power field effect transistor n ? channel enhancement ? mode lateral mosfet designed for gsm and gsm edge base station applications with frequencies from 1.8 to 2.0 ghz. suitable for fm, tdma, cdma and multicarrier amplifier applications. to be used in class ab for gsm and gsm edge cellular radio applications. ? gsm and gsm edge performances, full frequency band power gain ? 13.5 db (typ) @ 90 watts cw efficiency ? 52% (typ) @ 90 watts cw ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 90 watts cw output power ? excellent thermal stability ? characterized with series equivalent large ? signal impedance parameters ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain ? source voltage v dss ? 0.5, +65 vdc gate ? source voltage v gs ? 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 250 1.43 w w/ c storage temperature range t stg ? 65 to +150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 0.7 c/w table 3. esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. mrf18090a rev. 6, 12/2004 freescale semiconductor technical data MRF18090AR3 1.80 ? 1.88 ghz, 90 w, 26 v lateral n ? channel rf power mosfet case 465b ? 03, style 1 ni ? 880 ? freescale semiconductor, inc., 2004. all rights reserved.
5 ? 2 freescale semiconductor wireless rf product device data MRF18090AR3 table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate ? source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate quiescent voltage (v ds = 26 vdc, i d = 750 madc) v gs(q) 2.5 3.7 4.5 vdc drain ? source on ? voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.1 ? vdc forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 7.2 ? s dynamic characteristics reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 4.2 ? pf functional tests (in freescale test fixture) common ? source amplifier power gain @ 90 w (1) (v dd = 26 vdc, i dq = 750 ma, f = 1805 ? 1880 mhz) g ps 12.0 13.5 ? db drain efficiency @ 90 w (1) (v dd = 26 vdc, i dq = 750 ma, f = 1805 ? 1880 mhz) 47 52 ? % input return loss (1) (v dd = 26 vdc, p out = 90 w cw, i dq = 750 ma, f = 1805 ? 1880 mhz) irl ? ? ? 10 db output mismatch stress (v dd = 26 vdc, p out = 90 w cw, i dq = 750 ma vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test 1. to meet application requirements, freescale test fixtures have been designed to cover the full gsm1800 band, ensuring batch ? to ? batch consistency.
MRF18090AR3 5 ? 3 freescale semiconductor wireless rf product device data c1 10 f, 35 v tantalum capacitor, vishay ? sprague #293d106x9035d c2, c3 10 pf, 100b chip capacitor , atc #100b100gw c4 3.3 pf, 100b chip capacitor, atc #100b3r3bw c5, c6 6.8 pf, 100b chip capacitors, atc #100b6r8cw c7 12 pf, 100b chip capacitors, atc #100b120gw c8 220 f, 63 v electrolytic capacitor, philips #13668221 r1, r2 10 k , 1/8 w chip resistors (0805) r3 1.0 k , 1/8 w chip resistor (0805) z1 0.697 x 0.087 microstrip z2 0.087 x 0.197 microstrip z3 0.819 x 0.087 microstrip z4 0.181 x 0.144 microstrip z5 0.383 x 1.148 microstrip z6 0.400 x 1.380 microstrip z7 0.351 x 0.351 microstrip z8 0.126 x 0.087 microstrip z9 1.280 x 0.087 microstrip z10 1.275 x 0.055 microstrip pcb taconic tlx8 ? 0300, 0.030 , r = 2.55 figure 1. mrf18090a 1.80 ? 1.88 ghz test fixture schematic figure 2. mrf18090a 1.80 ? 1.88 ghz test fixture component layout mrf18090a rev 4 cut out area freescale has begun the transition of marking pr inted circuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
5 ? 4 freescale semiconductor wireless rf product device data MRF18090AR3 t1 ??? ??? ??? t2 z2 figure 3. 1.80 ? 1.88 ghz demo board schematic figure 4. 1.80 ? 1.88 ghz demo board component layout c1, c3 1 f chip capacitors (0805) c2 0.1 f chip capacitor (0805) c4 1 nf chip capacitor (0805) c5 220 f, 50 v electrolytic capacitor c6, c7 8.2 pf, 100a chip capacitors c8, c9, c10 22 pf, 100a chip capacitors r1 10 ? chip resistor (0805) r2, r3 1 k ? chip resistors (0805) r4 2.2 k ? chip resistor (0805) r5 10 k ? chip resistor (0603) r6 5 k ? , smd potentiometer t1 lp2951 micro ? 8 voltage regulator t2 bc847 sot ? 23 npn transistor z1 0.210 x 0.055 microstrip z2 0.419 x 0.787 microstrip z3 0.836 x 0.512 microstrip z4 0.164 x 0.055 microstrip substrate = 0.5 mm teflon ? glass ?? ?? ?? ? ? ? ?? ?? ?? ? ? ?? ?? ?? ?? ?? ? ? ? ? ? ? ? ? ? ? ? ?? ?? ?? ? mrf18090a freescale has begun the transition of marking pri nted circuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
MRF18090AR3 5 ? 5 freescale semiconductor wireless rf product device data typical characteristics figure 5. power gain versus output power figure 6. output power versus supply voltage figure 7. output power versus frequency figure 8. output power and efficiency versus input power figure 9. wideband gain and irl (at small signal)
5 ? 6 freescale semiconductor wireless rf product device data MRF18090AR3 figure 10. large signal source and load impedance ? f mhz z source ? z load ? 1805 1880 1930 1.10 ? j5.85 2.05 ? j8.00 1.56 ? j6.75 1.15 ? j2.16 1.13 ? j2.60 1.30 ? j2.23 1990 2.30 ? j7.30 0.82 ? j2.90 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground.
MRF18090AR3 5 ? 7 freescale semiconductor wireless rf product device data package dimensions case 465b ? 03 issue c ni ? 880 ! " d g k c e h f q 2x b b (flange) # aa (flange) t n (lid) m (insulator) s (insulator) r (lid) $$$ 4
5 ? 8 freescale semiconductor wireless rf product device data MRF18090AR3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2004. all rights reserved. how to reach us: home page: www.freescale.com e ? mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 ? 800 ? 521 ? 6274 or +1 ? 480 ? 768 ? 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 ? 8 ? 1, shimo ? meguro, meguro ? ku, tokyo 153 ? 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 ? 800 ? 441 ? 2447 or 303 ? 675 ? 2140 fax: 303 ? 675 ? 2150 ldcforfreescalesemiconductor@hibbertgroup.com mrf18090a rev. 6, 12/2004 document number:
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